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| Silizium-Fotodiode Silicon Photodiode BPW 33 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 1.8 1.4 3.5 3.0 0.6 0.4 2.2 1.9 Approx. weight 0.1 g Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm q Sperrstromarm (typ. 20 pA) q DIL-Plastikbauform mit hoher Packungsdichte Anwendungen q Belichtungsmesser q Farbanalyse Features q Especially suitable for applications from 350 nm to 1100 nm q Low reverse current (typ. 20 pA) q DIL plastic package with high packing density Applications q Exposure meters q Color analysis Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P76 Semiconductor Group 1 1997-11-19 feo06643 BPW 33 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 85 7 150 Einheit Unit C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 75 ( 35) 800 350 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 1 V Dark current Nullpunktsteilheit, E = 0 Zero crossover A LxB LxW H 7.34 2.71 x 2.71 mm2 mm x mm 0.5 mm 60 20 ( 100) 2.5 Grad deg. pA pA/mV IR S0 Semiconductor Group 2 1997-11-19 BPW 33 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (cont'd) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 70 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 1 V, = 850 nm Nachweisgrenze, VR = 1 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.59 0.86 440 ( 375) 72 1.5 Einheit Unit A/W Electrons Photon mV A s S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 630 - 2.6 0.2 4.3 x 10- 15 V pF mV/K %/K W Hz cm * Hz W D* 6.3 x 1013 Semiconductor Group 3 1997-11-19 BPW 33 Relative spectral sensitivity Srel = f () 100 OHF00062 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) P Total power dissipation Ptot = f (TA) 10 4 mV S rel % 80 A 10 3 OHF01064 VO 10 3 160 mW Ptot 140 120 100 OHF00958 10 2 VO 60 10 1 40 10 2 80 60 P 10 0 20 10 1 40 20 0 400 600 800 1000 nm 1200 10 -1 0 10 10 1 10 2 10 3 10 lx 10 4 0 0 0 20 40 60 Ee 80 C 100 TA Dark current IR = f (VR), E = 0 80 OHF00073 Capacitance C = f (VR), f = 1 MHz, E = 0 1000 OHF01065 Dark current IR = f (TA), VR = 1 V, E = 0 R 10 4 pA OHF00075 R pA 60 C pF 800 700 600 10 3 40 500 400 300 10 2 20 200 100 10 1 0 0 1 2 3 4 5 6 7 8 V 10 0 -2 10 10 -1 10 0 VR 10 1 V 10 2 VR 10 0 0 20 40 60 80 C 100 TA Directional characteristics Srel = f () 40 30 20 10 0 1.0 OHF01402 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-19 |
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